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  We are developing & producing Gallium Arsenide Wafers (GaAs wafers) & crystal using advanced crystal growth technology, such as VGF and GaAs wafer processing technology. Our quality GaAs wafers of 2~6 inch wafers are used in LED, lD and other Microelectronics applications industries.

  Get the best quality AlN on Sapphire or AlN template for UV LEDs, IR seekers windows, Laser, RF transistors and other semiconductor devices from PWAM.  As a supplier we develop single crystalline Aluminum Nitride substrates on c-plane sapphire template of 30nm to 5 Um thicknesses with good dislocation density. For more information visit our website.

                                      We provide four different crystal structure of silicon carbide (SiC) crystal . Namely they are 6H-SiC Wurtzite ( Hexagonal), 4H-SiC Wurtzite ( Hexagonal), 3C-SiC Zinc blende (cubic) and SiC Epi wafer. It is widely used LED, RF, high power devices, high temperature devices and high frequency power devices manufacturing industries to produce quality semiconductor products. For more information visit our website.

    SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you. for more information visit our website.

  We are developing & producing Gallium Arsenide Wafers (GaAs wafers) & crystal using advanced crystal growth technology, such as VGF and GaAs wafer processing technology. Our quality GaAs wafers of 2~6 inch wafers are used in LED, lD and other Microelectronics applications industries.

  Get the best quality AlN on Sapphire or AlN template for UV LEDs, IR seekers windows, Laser, RF transistors and other semiconductor devices from PWAM.   As a supplier we develop single crystalline Aluminum Nitride substrates on c-plane sapphire template of 30nm to 5 Um thicknesses with good dislocation density.

We provide four different crystal structure of silicon carbide (SiC) crystal . Namely they are 6H-SiC Wurtzite ( Hexagonal), 4H-SiC Wurtzite ( Hexagonal), 3C-SiC Zinc blende (cubic) and SiC Epi wafer. It is widely used LED, RF, high power devices, high temperature devices and high frequency power devices manufacturing industries to produce quality semiconductor products.  

  SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory. Our main aim is to produce the best silicon wafer for you.